Search results for "single event gate rupture"

showing 2 items of 2 documents

Microbeam SEE Analysis of MIM Capacitors for GaN Amplifiers

2018

Broad-beam and microbeam single-event effect tests were performed on metal–insulator–metal capacitors with three different thicknesses of silicon nitride (Si3N4) dielectric insulator: 250, 500, and 750 nm. The broad-beam tests indicated that the devices with the thicker, 500- and 750-nm dielectric did not have a greater breakdown voltage. The surrounding structures of the capacitor were suspected to be a possible cause. Microbeam techniques made it possible to localize the failure location for the 500- and 750-nm devices. The failure occurs in the air bridge structure connected to the top capacitor plate, which can therefore be considered as an edge effect, while for the 250-nm devices, the…

Nuclear and High Energy PhysicsMaterials scienceInsulator (electricity)Dielectrickondensaattorit01 natural sciencesmetal–insulator–semiconductor (MIS) deviceslaw.inventionelektroniikkakomponentitchemistry.chemical_compoundlaw0103 physical sciencesBreakdown voltageElectrical and Electronic EngineeringMetal–insulator–metal (MIM) devicessingle event effects (SEEs)ta114ta213010308 nuclear & particles physicsbusiness.industryAmplifierMicrobeamsingle event gate ruptureCapacitorNuclear Energy and EngineeringSilicon nitridechemistrysäteilyfysiikkaElectrodeOptoelectronicsbusinessIEEE Transactions on Nuclear Science
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SEGR in SiO${}_2$–Si$_3$N$_4$ Stacks

2014

Abstract. This work presents experimental Single Event Gate Rupture (SEGR) data for Metal–Insulator–Semiconductor (MIS) devices, where the gate dielectrics are made of stacked SiO2–Si3N4 structures. A semi-empirical model for predicting the critical gate voltage in these structures under heavy-ion exposure is first proposed. Then interrelationship between SEGR cross- section and heavy-ion induced energy deposition probability in thin dielectric layers is discussed. Qualitative connection between the energy deposition in the dielectric and the SEGR is proposed. peerReviewed

PhysicsNuclear and High Energy Physicsta114Condensed matter physicsbusiness.industrymodelingDielectricMOSGate voltageSingle Event Gate Rupture (SEGR)Nuclear Energy and EngineeringOptoelectronicsElectrical and Electronic Engineeringbusinesssemi-empiricalDeposition (law)IEEE Transactions on Nuclear Science
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